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IRG4BC20UD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • C.
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co-packaged with.

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Datasheet Details

Part number IRG4BC20UD
Manufacturer IRF
File Size 235.26 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20UD Datasheet
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Full PDF Text Transcription

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PD-91449C IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package G E N-Channel VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A Benefits • Generation 4 IGBTs offers the highest efficiencies available • Optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
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