Datasheet4U Logo Datasheet4U.com

IRG4BC20U - Insulated gate bipolar transistor

Features

  • • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

📥 Download Datasheet

Datasheet preview – IRG4BC20U

Datasheet Details

Part number IRG4BC20U
Manufacturer IRF
File Size 354.36 KB
Description Insulated gate bipolar transistor
Datasheet download datasheet IRG4BC20U Datasheet
Additional preview pages of the IRG4BC20U datasheet.

📁 Similar Datasheet

  • IRG4BC20UD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20UPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20FD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20FDPBF - INSULATED GATEBIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20FPBF - Fast Speed IGBT (International Rectifier)
  • IRG4BC20K-SPBF - Short Circuit Rated UltraFast IGBT (International Rectifier)
  • IRG4BC20KD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20MD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4BC20MDPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Other Datasheets by IRF

Full PDF Text Transcription

Click to expand full text
PD - 95445A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20UPbF UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.
Published: |