IRG4BC20U
Features
Ultra Fast: optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-220AB package
Lead-Free
G E n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
VCES = 600V VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy
- Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage...
