IRG4BC20UD-S
Features
- Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200k Hz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard D2Pak package
- Lead-Free
N-channel
VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A
Benefits
- Generation 4 IGBTs offers highest efficiencies available
- Optimized for specific application conditions
- HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
D2Pak
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current...
