IRG4BC20S Datasheet PDF - IRF INSULATED GATE BIPOLAR TRANSISTOR Specs

IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

Datasheet Details

Part number	IRG4BC20S
Manufacturer	IRF
File Size	157.99 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC20S Datasheet
Additional preview pages of the IRG4BC20S datasheet.

📁 Similar Datasheet

IRG4BC20SD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20SDPbF - Standard Speed IGBT (International Rectifier)

IRG4BC20FD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20FDPBF - INSULATED GATEBIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20FPBF - Fast Speed IGBT (International Rectifier)

IRG4BC20K-SPBF - Short Circuit Rated UltraFast IGBT (International Rectifier)

IRG4BC20KD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20MD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC20MDPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

Full PDF Text Transcription

Click to expand full text

PD - 91597A IRG4BC20S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

Published: Aug 23, 2005 |