IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR

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IRF

Part number	IRG4BC20S
Manufacturer	IRF
File Size	157.99 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC20S Datasheet
Additional preview pages of the IRG4BC20S datasheet.

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: Aug 23, 2005 |