Full PDF Text Transcription for IRG4BC20SD (Reference)
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IRG4BC20SD. For precise diagrams, and layout, please refer to the original PDF.
PD- 91793 IRG4BC20SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power...
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Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-cha nn el Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
IRG4BC20SD Datasheet
