• Part: IRG4BC20SD
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 287.80 KB
Download IRG4BC20SD Datasheet PDF
IRF
IRG4BC20SD
Features - Extremely low voltage drop 1.4Vtyp. @ 10A - S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. - Very Tight Vce(on) distribution - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-220AB package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-cha nn el Benefits - Generation 4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing - Lower losses than MOSFET's conduction and Diode losses TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector...