IRGP20B120UD-E transistor equivalent, insulated gate bipolar transistor.
* UltraFast Non Punch Through (NPT) Technology
* Low Diode VF (1.67V Typical @ 20A & 25°C)
* 10 µs Short Circuit Capability
* Square RBSOA
* UltraSoft.
* Rugged with UltraFast Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current .
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