IRGP20B120UD-E Datasheet - IRF

INSULATED GATE BIPOLAR TRANSISTOR

* UltraFast Non Punch Through (NPT) Technology

* Low Diode VF (1.67V Typical @ 20A & 25°C)

* 10 µs Short Circuit Capability

* Square RBSOA

* UltraSoft Diode Recovery Characteristics

* Positive VCE(on) Temperature Coefficient

* Extended Lead TO-

IRGP20B120UD-E

IRF

148.42 KB

Insulated gate bipolar transistor.

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IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR IRF

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