IRHM9064 Datasheet - IRF

IRHM9064 P-Channel Transistor

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1438 REPETITIVE AVALANCHE AND dv/dt RATED IRHM9064 P-CHANNEL HEXFET TRANSISTOR RAD HARD -60 Volt, 0.060Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD .

IRHM9064 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating S

IRHM9064_IRF.pdf