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IS35ML04G081 Datasheet 4gb 3.3v X8 Nand Flash Memory

Manufacturer: ISSI (now Infineon)

Overview: IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 4Gb(x8) 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS35ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML04G088 4Gb SLC-8b ECC
IS35ML04G0168 4Gb SLC-8b ECC
IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS35MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY

IS35ML04G081 Distributor