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IS35ML04G0168 - 4Gb SLC-8b ECC

Download the IS35ML04G0168 datasheet PDF. This datasheet also covers the IS34ML04G088 variant, as both devices belong to the same 4gb slc-8b ecc family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS34ML04G088-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Data in the page mode can be read out at 25ns cycle tim

Overview

IS34ML04G088/168 IS35ML04G088/168 4Gb SLC-8b ECC 3.3V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G088/168 4Gb (x8/x16) 3.

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Program time: 300us (typ. ), 700.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS35ML04G081 4Gb 3.3V X8 NAND FLASH MEMORY
IS35ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML04G088 4Gb SLC-8b ECC
IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS35MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY