Datasheet Summary
IS34ML04G084 IS35ML04G084
4Gb SLC-4b ECC
3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34/35ML04G084 4Gb (x8) 3.3V NAND FLASH MEMORY with 4b ECC
Features
- Flexible & Efficient Memory Architecture
- Organization: 512Mb x8
- Memory Cell Array: (512M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Page Size: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Memory Cell: 1bit/Memory Cell
- Highest performance
- Read Performance
- Random Read: 25us (Max.)
- Serial Access: 25ns (Max.)
- Write Performance
- Program time: 300us
- typical
- Block Erase time: 3ms
- typical
- Low Power with Wide Temp. Ranges
- Single 3.3V (2.7V to 3.6V) Voltage Supply
- 10 mA Active Read Current
- 8 µA...