Datasheet Summary
IS34ML01G084 IS35ML01G084
1Gb SLC-4b ECC
3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
1Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC
IS34/35ML01G084
Features
- Flexible & Efficient Memory Architecture
- Organization: 128Mb x8
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
- Page Size: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Memory Cell: 1bit/Memory Cell
- Highest performance
- Read Performance
- Random Read: 25us (Max.)
- Serial Access: 25ns (Max.)
- Write Performance
- Program time: 300us
- typical
- Block Erase time: 3ms
- typical
- Low Power with Wide Temp. Ranges
- Single 3.3V (2.7V to 3.6V) Voltage Supply
- 15 mA Active Read Current
- 10 µA...