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IS35ML04G081

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS35ML04G081 datasheet preview

Datasheet Details

Part number IS35ML04G081
Datasheet IS35ML04G081 IS34ML04G081 Datasheet (PDF)
File Size 1.40 MB
Manufacturer ISSI (now Infineon)
Description 4Gb 3.3V X8 NAND FLASH MEMORY
IS35ML04G081 page 2 IS35ML04G081 page 3

IS35ML04G081 Overview

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

IS35ML04G081 Key Features

  • Flexible & Efficient Memory Architecture
  • Organization: 512Mb x8
  • Memory Cell Array: (512M + 16M) x 8bit
  • Data Register: (2K + 64) x 8bit
  • Page Size: (2K + 64) Byte
  • Block Erase: (128K + 4K) Byte
  • Memory Cell: 1bit/Memory Cell
  • Highest performance
  • Read Performance
  • Random Read: 25us (Max.)
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

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IS35ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY
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IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS35MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY

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