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IS35ML04G081 - 4Gb 3.3V X8 NAND FLASH MEMORY

Download the IS35ML04G081 datasheet PDF. This datasheet also covers the IS34ML04G081 variant, as both devices belong to the same 4gb 3.3v x8 nand flash memory family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS34ML04G081-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Overview

IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 4Gb(x8) 3.

Key Features

  • Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS35ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML04G088 4Gb SLC-8b ECC
IS35ML04G0168 4Gb SLC-8b ECC
IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS35MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY