IS43DR32801A Datasheet PDF - ISSI 8Mx32 256Mb DDR2 DRAM Specs

IS43DR32801A - 8Mx32 256Mb DDR2 DRAM

This page provides the datasheet information for the IS43DR32801A, a member of the IS43DR32800A 8Mx32 256Mb DDR2 DRAM family.

Datasheet Summary

Description

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Features

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
JEDEC standard 1.8V I/O (SSTL_18-compatible).
Double data rate interface: two data transfers per clock cycle.
Differential data strobe (DQS, DQS).
4-bit prefetch architecture.
On chip DLL to align DQ and DQS transitions with CK.
4 internal banks for concurrent operation.
Programmable CAS latency (CL) 3, 4, 5, and 6 supported.
Posted CAS and programmable additive latency.

Datasheet Details

Part number	IS43DR32801A
Manufacturer	ISSI
File Size	625.37 KB
Description	8Mx32 256Mb DDR2 DRAM
Datasheet	IS43DR32801A Datasheet
Additional preview pages of the IS43DR32801A datasheet.

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Full PDF Text Transcription

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IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM PRELIMINARY INFORMATION SEPTEMBER 2010 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.

Published: Aug 1, 2016 |