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IS43R86400F - 512Mb DDR SDRAM

This page provides the datasheet information for the IS43R86400F, a member of the IS46R86400F 512Mb DDR SDRAM family.

Description

x8 A0-A12 Row Add

Features

  • VDD and VDDQ: 2.5V ± 0.2V (-5, -6).
  • VDD and VDDQ: 2.5V ± 0.1V (-4).
  • SSTL_2 compatible I/O.
  • Double-data rate architecture; two data transfers per clock cycle.
  • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver.
  • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
  • Differential clock inputs (CK and CK).
  • DLL aligns DQ and DQS transitions.

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Full PDF Text Transcription

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IS43/46R86400F IS43/46R16320F ® Long-term Support World Class Quality 32Mx16, 64Mx8 JANUARY 2020 512Mb DDR SDRAM FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-5, -6) • VDD and VDDQ: 2.5V ± 0.1V (-4) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data Mask for write data.
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