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IS61WV102416DBLL - 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV102416DBLL datasheet PDF. This datasheet also covers the IS64WV102416DALL variant, as both devices belong to the same 1m x 16 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 10ns, 12ns.
  • High- performance, low power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CS# and OE#.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61/64WV102416DALL).
  • 2.4V-3.6V VDD (IS61/64WV102416DBLL).
  • Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I).
  • Industrial and Au.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV102416DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61/64WV102416DALL IS61/64WV102416DBLL 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEBURARY 2023 FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416DALL) – 2.4V-3.6V VDD (IS61/64WV102416DBLL) • Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I) • Industrial and Automotive temperature support • Lead-free available • Data Control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits.