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IS61WV6416BLL Datasheet 64K x 16 HIGH-SPEED CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS61WV6416BLL datasheet PDF. This datasheet also includes the IS64WV6416BLL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS64WV6416BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61/64WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption.

Overview

IS64WV6416BLL IS61WV6416BLL ® Long-term Support World Class Quality 64K x 16 HIGH-SPEED CMOS STATIC RAM APRIL.

Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
  • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby.
  • TTL compatible interface levels.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Automotive Temperature Available.
  • Lead-free available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM