IS61WV6416EEBLL - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI

IS61WV6416EEBLL Datasheet Preview — Preview of IS61WV6416EEBLL PDF

Datasheet Details

Part number	IS61WV6416EEBLL
Manufacturer	ISSI
File Size	636.02 KB
Description	64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV6416EEBLL-ISSI.pdf

IS61WV6416EEBLL Product details

Description

The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip E

Features

High-speed access time: 8, 10 ns.
Low Active Power: 85 mW (typical).
Low Standby Power: 7 mW (typical) CMOS standby.
Single power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Automotive temperature support.
Lead-free available.
Error Detection and Error Correction.

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Published: Feb 19, 2024 |