IS61WV12816DALL Datasheet (Integrated Silicon Solution) - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV12816DALL, 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance

IS61WV12816DALL Features

* HIGH SPEED: (IS61/64WV12816DALL/DBLL)

* High-speed access time: 8, 10, 12, 20 ns

* Low Active Power: 135 mW (typical)

* Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS)

* High-speed access time: 25, 35 ns

* Low Active Power: