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IS61WV12816EFALL, IS64WV12816EFALL - 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61WV12816EFALL Description

IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022 KEY .
The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

IS61WV12816EFALL Features

* High-speed access time: 8ns, 10ns, 12ns
* Single power supply
* 1.65V-2.2V VDD(IS61/64WV12816EFALL)
* 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and corr

IS61WV12816EFALL Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IS61WV12816EFALL, IS64WV12816EFALL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IS61WV12816EFALL, IS64WV12816EFALL
Manufacturer
ISSI
File Size
607.03 KB
Datasheet
IS64WV12816EFALL-ISSI.pdf
Description
128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Note
This datasheet PDF includes multiple part numbers: IS61WV12816EFALL, IS64WV12816EFALL.
Please refer to the document for exact specifications by model.

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128K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI
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