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IS61WV12816EFBLL

128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61WV12816EFBLL Features

* High-speed access time: 8ns, 10ns, 12ns

* Single power supply

* 1.65V-2.2V VDD(IS61/64WV12816EFALL)

* 2.4V-3.6V VDD (IS61/64WV12816EFBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and corr

IS61WV12816EFBLL General Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design.

IS61WV12816EFBLL Datasheet (607.03 KB)

Preview of IS61WV12816EFBLL PDF

Datasheet Details

Part number:

IS61WV12816EFBLL

Manufacturer:

ISSI

File Size:

607.03 KB

Description:

128k x 16 high speed aynchronous cmos static ram.

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IS61WV12816EFBLL 128K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

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