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IS61WV51216BLL

512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216BLL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE op- tions

* CE power-down

* Fully static operation: no clock or

IS61WV51216BLL General Description

The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-perform- ance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low powe.

IS61WV51216BLL Datasheet (199.14 KB)

Preview of IS61WV51216BLL PDF

Datasheet Details

Part number:

IS61WV51216BLL

Manufacturer:

Integrated Silicon Solution

File Size:

199.14 KB

Description:

512k x 16 high-speed asynchronous cmos static ram.

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IS61WV51216BLL 512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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