IS61WV51216BLL, IS61WV51216ALL Datasheet (Integrated Silicon Solution) - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216BLL, IS61WV51216ALL, 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-perform- ance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low powe

IS61WV51216BLL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE op- tions

* CE power-down

* Fully static operation: no clock or