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IS61WV51216EEBLL, IS61WV51216EEALL Datasheet - ISSI

IS61WV51216EEBLL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design t.

IS61WV51216EEBLL Features

* High-speed access time: 8ns, 10ns, 20ns

* Single power supply

* 1.65V-2.2V VDD (IS61WV51216EEALL)

* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2

IS61WV51216EEALL-ISSI.pdf

This datasheet PDF includes multiple part numbers: IS61WV51216EEBLL, IS61WV51216EEALL. Please refer to the document for exact specifications by model.
IS61WV51216EEBLL Datasheet Preview Page 2 IS61WV51216EEBLL Datasheet Preview Page 3

Datasheet Details

Part number:

IS61WV51216EEBLL, IS61WV51216EEALL

Manufacturer:

ISSI

File Size:

866.18 KB

Description:

512k x 16 high speed aynchronous cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: IS61WV51216EEBLL, IS61WV51216EEALL.
Please refer to the document for exact specifications by model.

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IS61WV51216EEBLL IS61WV51216EEALL 512K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

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