Datasheet4U Logo Datasheet4U.com

IS61WV51216EEBLL

512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61WV51216EEBLL Features

* High-speed access time: 8ns, 10ns, 20ns

* Single power supply

* 1.65V-2.2V VDD (IS61WV51216EEALL)

* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2

IS61WV51216EEBLL General Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design t.

IS61WV51216EEBLL Datasheet (866.18 KB)

Preview of IS61WV51216EEBLL PDF

Datasheet Details

Part number:

IS61WV51216EEBLL

Manufacturer:

ISSI

File Size:

866.18 KB

Description:

512k x 16 high speed aynchronous cmos static ram.

📁 Related Datasheet

IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS61WV51232ALL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232ALS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232BLL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC (ISSI)

TAGS

IS61WV51216EEBLL 512K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

Image Gallery

IS61WV51216EEBLL Datasheet Preview Page 2 IS61WV51216EEBLL Datasheet Preview Page 3

IS61WV51216EEBLL Distributor