IS61WV51216EEALL Datasheet (ISSI) - 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61WV51216EEALL, 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit design t

IS61WV51216EEALL Features

* High-speed access time: 8ns, 10ns, 20ns

* Single power supply

* 1.65V-2.2V VDD (IS61WV51216EEALL)

* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2