IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

ISSI

Description

IS61WV51216EEALL IS61/64WV51216EEBLL 512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2019 KEY .
The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

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Datasheet Specifications

Part number: IS61WV51216EEALL
Manufacturer: ISSI
File Size: 866.18 KB
Datasheet: IS61WV51216EEALL-ISSI.pdf
Description: 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Features

* High-speed access time: 8ns, 10ns, 20ns
* Single power supply
* 1.65V-2.2V VDD (IS61WV51216EEALL)
* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)
* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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IS61WV51216EEALL 512K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

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