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IS61WV51216EDBLL, IS61WV51216EDALL Datasheet - ISSI

IS61WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p.

IS61WV51216EDBLL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE options

* CE power-down

* Fully static operation: no clock or r

IS61WV51216EDALL-ISSI.pdf

This datasheet PDF includes multiple part numbers: IS61WV51216EDBLL, IS61WV51216EDALL. Please refer to the document for exact specifications by model.
IS61WV51216EDBLL Datasheet Preview Page 2 IS61WV51216EDBLL Datasheet Preview Page 3

Datasheet Details

Part number:

IS61WV51216EDBLL, IS61WV51216EDALL

Manufacturer:

ISSI

File Size:

587.88 KB

Description:

512k x 16 high-speed asynchronous cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: IS61WV51216EDBLL, IS61WV51216EDALL.
Please refer to the document for exact specifications by model.

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IS61WV51216EDBLL IS61WV51216EDALL 512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

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