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IS61WV51216EDALL

512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216EDALL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE options

* CE power-down

* Fully static operation: no clock or r

IS61WV51216EDALL General Description

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p.

IS61WV51216EDALL Datasheet (587.88 KB)

Preview of IS61WV51216EDALL PDF

Datasheet Details

Part number:

IS61WV51216EDALL

Manufacturer:

ISSI

File Size:

587.88 KB

Description:

512k x 16 high-speed asynchronous cmos static ram.

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IS61WV51216EDALL 512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

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