IS61WV51216EDALL Datasheet (ISSI) - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216EDALL, 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

It is fabri- cated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

IS61WV51216EDALL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE options

* CE power-down

* Fully static operation: no clock or r