IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI

Description

IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 .
The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

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Datasheet Specifications

Part number: IS61WV51216EDALL
Manufacturer: ISSI
File Size: 587.88 KB
Datasheet: IS61WV51216EDALL-ISSI.pdf
Description: 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Features

* High-speed access times: 8, 10, 20 ns
* High-performance, low-power CMOS process
* Multiple center power and ground pins for greater noise immunity
* Easy memory expansion with CE and OE options
* CE power-down
* Fully static operation: no clock or r

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

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