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IS61WV12816DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV12816DBLS Features

* HIGH SPEED: (IS61/64WV12816DALL/DBLL)

* High-speed access time: 8, 10, 12, 20 ns

* Low Active Power: 135 mW (typical)

* Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS)

* High-speed access time: 25, 35 ns

* Low Active Power:

IS61WV12816DBLS General Description

The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance.

IS61WV12816DBLS Datasheet (456.54 KB)

Preview of IS61WV12816DBLS PDF

Datasheet Details

Part number:

IS61WV12816DBLS

Manufacturer:

Integrated Silicon Solution

File Size:

456.54 KB

Description:

128k x 16 high speed asynchronous cmos static ram.

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IS61WV12816DBLS 128K HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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