Datasheet4U Logo Datasheet4U.com

IS61WV51216ALL

512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216ALL Features

* High-speed access times: 8, 10, 20 ns

* High-performance, low-power CMOS process

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with CE and OE op- tions

* CE power-down

* Fully static operation: no clock or

IS61WV51216ALL General Description

The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-perform- ance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low powe.

IS61WV51216ALL Datasheet (199.14 KB)

Preview of IS61WV51216ALL PDF

Datasheet Details

Part number:

IS61WV51216ALL

Manufacturer:

Integrated Silicon Solution

File Size:

199.14 KB

Description:

512k x 16 high-speed asynchronous cmos static ram.

📁 Related Datasheet

IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51216EEBLL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232ALL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232ALS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232BLL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV51232BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC (ISSI)

TAGS

IS61WV51216ALL 512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Image Gallery

IS61WV51216ALL Datasheet Preview Page 2 IS61WV51216ALL Datasheet Preview Page 3

IS61WV51216ALL Distributor