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IS62WV12816EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816EALL).
  • 2.2V-3.6V VDD (IS62/65WV12816EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free available BLOCK.

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Full PDF Text Transcription for IS62WV12816EALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS62WV12816EALL. For precise diagrams, and layout, please refer to the original PDF.

IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45...

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RY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Three state outputs  Industrial and Automotive temperature support  2CS Option Available  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

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