Datasheet4U Logo Datasheet4U.com

IS62WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM

Datasheet Summary

Description

bits.

CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vdd (IS62/65WV12816DALL).
  • 2.5V--3.6V Vdd (IS62/65WV12816DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Autotmo.

📥 Download Datasheet

Datasheet preview – IS62WV12816DALL

Datasheet Details

Part number IS62WV12816DALL
Manufacturer ISSI
File Size 415.50 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS62WV12816DALL Datasheet
Additional preview pages of the IS62WV12816DALL datasheet.

📁 Similar Datasheet

  • IS62WV1288ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV1288BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416BLL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV10248BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV20488ALL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV20488BLL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV25616ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV25616BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV2568ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.
Published: |