Datasheet4U Logo Datasheet4U.com

IS62WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

bits.

CMOS technology.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vdd (IS62/65WV12816DALL).
  • 2.5V--3.6V Vdd (IS62/65WV12816DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Autotmo.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV1288ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV1288BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.