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IS66WV51216EALL Datasheet - ISSI

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216EALL Features

* High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )

* CMOS Lower Power Operation

* Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

* L

IS66WV51216EALL General Description

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power .

IS66WV51216EALL Datasheet (723.87 KB)

Preview of IS66WV51216EALL PDF

Datasheet Details

Part number:

IS66WV51216EALL

Manufacturer:

ISSI

File Size:

723.87 KB

Description:

Ultra low power pseudo cmos static ram.

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IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

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