• Part: IS66WVC4M16ALL
  • Description: 64Mb Async/Page/Burst CellularRAM
  • Manufacturer: ISSI
  • Size: 706.63 KB
IS66WVC4M16ALL Datasheet (PDF) Download
ISSI
IS66WVC4M16ALL

Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

Key Features

  • Single device supports asynchronous , page, and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance  VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
  • Burst mode for Read and Write operation  4, 8, 16,32 or Continuous
  • Low Power Feature  Reduced Array Refresh  Temperature Controlled Refresh  Deep power-down (DPD) mode
  • Operation Frequency up to 104Mhz