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IS66WVE4M16EALL Datasheet 64mb Async/page Psram

Manufacturer: ISSI (now Infineon)

Overview: IS66WVE4M16EALL/BLL/CLL IS67WVE4M16EALL/BLL/CLL 64Mb Async/Page PSRAM PRELIMINARY INFORMATION Overview The IS66/67WVE4M16EALL/BLL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 55ns, 70ns.
  • Intrapage Read access : 20ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 23mA.
  • Standby < 200 uA (max. ).
  • Deep power-down (DPD).
  • ALL/CLL: < 3µA (Typ.

IS66WVE4M16EALL Distributor

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVE4M16EBLL 64Mb Async/Page PSRAM
IS66WVE4M16ECLL 64Mb Async/Page PSRAM
IS66WVE4M16ALL 1.8V Core Async/Page PSRAM
IS66WVE4M16BLL 3.0V Core Async/Page PSRAM
IS66WVE4M16TALL 64Mb Async/Page PSRAM
IS66WVE4M16TBLL 64Mb Async/Page PSRAM
IS66WVE4M16TCLL 64Mb Async/Page PSRAM
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 3.0V Core Async/Page PSRAM
IS66WVE1M16EALL 16Mb Async/Page PSRAM