IS66WVE4M16EALL
Description
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
Key Features
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- Page mode read access Interpage Read access : 55ns, 70ns Intrapage Read access : 20ns
- Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 23mA Standby < 200 uA (max.) Deep power-down (DPD)
- Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode
- Packages: 48-ball TFBGA
- The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi
