Datasheet4U Logo Datasheet4U.com

IS66WVE4M16TCLL Datasheet 64mb Async/page Psram

Manufacturer: ISSI (now Infineon)

Overview: IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVE4M16TALL 64Mb Async/Page PSRAM
IS66WVE4M16TBLL 64Mb Async/Page PSRAM
IS66WVE4M16ALL 1.8V Core Async/Page PSRAM
IS66WVE4M16BLL 3.0V Core Async/Page PSRAM
IS66WVE4M16EALL 64Mb Async/Page PSRAM
IS66WVE4M16EBLL 64Mb Async/Page PSRAM
IS66WVE4M16ECLL 64Mb Async/Page PSRAM
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 3.0V Core Async/Page PSRAM
IS66WVE1M16EALL 16Mb Async/Page PSRAM

IS66WVE4M16TCLL Distributor