Overview: HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW
trr £ 250 ns Preliminary data Symbol
VDSS V
DGR
VGS V
GSM
I
D25
ID(RMS) I
DM
IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL VISOL Weight
Symbol
V DSS
VGS(th) IGSS
IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Maximum Ratings 100 V 100 V ±20 V ±30 V 165 A 76 A 720 A 180 A 60 mJ 3 J 5 V/ns 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 2500 V~ 5 g Test Conditions V = 0 V, I = 3mA GS D VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS V =0V
GS
VGS = 10 V, ID = 90A Note 1 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 100 V 2.0 4.
