180N10 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW tr

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG

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IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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TAB 23 1 H2PAK-2 D(TAB) G(1) STH180N10F3-2 Datasheet N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package Features Order

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR E

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HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(o

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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor IXTP180N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol

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Silicon N-Channel Power MOSFET ○R CS180N10 A8 General Description： CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Co

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® STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 s s s s s V DSS 100 V R DS(on) < 7 mΩ ID 180 A TYPICAL RDS(on)

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NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1

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NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1

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isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanch

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HRS180N10K HRS180N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Cha

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy

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OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur

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