INCHANGE
IXTH180N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr
Rating:
1
★
(8 votes)
ON Semiconductor
NDBA180N10B - Power MOSFET
NDBA180N10B
Power MOSFET 100V, 2.8mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1
Rating:
1
★
(7 votes)
Infineon
IPD180N10N3G - Power-Transistor
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
Rating:
1
★
(7 votes)
INCHANGE
IXTQ180N10T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max) ·Fast Swit
Rating:
1
★
(6 votes)
Infineon Technologies
IPA180N10N3G - Power-Transistor
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
Rating:
1
★
(5 votes)
IXYS Corporation
IXTP180N10T - Power MOSFET
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Sy
Rating:
1
★
(5 votes)
ON Semiconductor
NDPL180N10B - Power MOSFET
NDPL180N10B
Power MOSFET 100V, 3.0mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1
Rating:
1
★
(5 votes)
Infineon
IPI180N10N3 - Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
Rating:
1
★
(5 votes)
INCHANGE
IPA180N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switc
Rating:
1
★
(5 votes)
Infineon
IPA180N10N3 - Power-Transistor
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
Rating:
1
★
(5 votes)
Infineon
IPD180N10N3 - Power-Transistor
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
Rating:
1
★
(5 votes)
INCHANGE
IPD180N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanch
Rating:
1
★
(5 votes)
INCHANGE
IXFP180N10T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor
IXFP180N10T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo
Rating:
1
★
(5 votes)
INCHANGE
IXTP180N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor
IXTP180N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol
Rating:
1
★
(5 votes)
Infineon
180N10N - Power Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
Rating:
1
★
(5 votes)
ETC
IXFN180N10 - Power MOSFET
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mΩ
trr ≤ 250 ns
Symbol Test Co
Rating:
1
★
(4 votes)
IXYS Corporation
IXFX180N10 - Power MOSFETs
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD
Rating:
1
★
(4 votes)
IXYS Corporation
IXFP180N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA180N10T2 IXFP180N10T2
Symbol
VDSS VDGR
VG
Rating:
1
★
(4 votes)
IXYS Corporation
IXFA180N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA180N10T2 IXFP180N10T2
Symbol
VDSS VDGR
VG
Rating:
1
★
(4 votes)
IXYS Corporation
IXTA180N10T - Power MOSFET
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Sy
Rating:
1
★
(4 votes)
