HiPerFETTM Power MOSFETs ISOPLUS247TM (Electricall.
INCHANGE
IXFP180N10T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFP180N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.
Infineon
IPB180N10S4-02 - Power-Transistor
OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur.
Infineon
180N10N - Power Transistor
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IXYS
180N10 - Power MOSFETs
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW tr.
SemiHow
HRP180N10K - N-Channel Trench MOSFET
HRP180N10K HRP180N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Cha.
SemiHow
HRLO180N10K - N-Channel Trench MOSFET
HRLO180N10K Jan 2016 HRLO180N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged Advanced Trench Process Tec.
IXYS Corporation
IXTA180N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.
IXYS Corporation
IXTP180N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.
IXYS Corporation
IXTA180N10T7 - Power MOSFET
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.
IXYS Corporation
IXTH180N10T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).
IXYS Corporation
IXTQ180N10T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).
ON Semiconductor
NDBA180N10B - Power MOSFET
NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1.
ON Semiconductor
NDPL180N10B - Power MOSFET
NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1.
Infineon
IPD180N10N3G - Power-Transistor
IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Infineon
IPB180N10S4-03 - Power-Transistor
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating .
SemiHow
HRD180N10K - N-Channel MOSFET
HRD180N10K_HRU180N10K HRD180N10K / HRU180N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology .
SemiHow
HRU180N10K - N-Channel MOSFET
HRD180N10K_HRU180N10K HRD180N10K / HRU180N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology .
Analog Power
AM180N10-04M5P - N-Channel MOSFET
Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.
SemiHow
HRLF180N10K - N-Channel MOSFET
HRLF180N10K Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET FEATURES BVDSS = 100 V ID = 40 A Unrivalled Gate Charge : 94 nC (Typ.) Lower R.
CR Micro
CS180N10A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS180N10 A8 General Description： CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T.
