20N60C5 Description
VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10.
20N60C5 Key Features
- fast CoolMOS™ 1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density