CPC5603C Datasheet - IXYS

N-Channel FET

CPC5603C Features

* 415V Drain-to-Source Voltage

* Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

* Low On-Resistance: 8 (Typical) @ 25°C

* Low VGS(off) Voltage: -2.0V to -3.6V

* High Input Impedance

* Low Input and Output Leakage

* Small Package

CPC5603C General Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Th.

CPC5603C Datasheet (110.49 KB)

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Datasheet Details

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CPC5603C

Manufacturer:

IXYS

File Size:

110.49 KB

Description:

N-channel fet.

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CPC5603C N-Channel FET IXYS

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CPC5603C Features

CPC5603C General Description

Datasheet Details

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