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CPC5603C - N-Channel FET

Download the CPC5603C datasheet PDF. This datasheet also covers the CPC5603 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • 415V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 8 (Typical) @ 25°C.
  • Low VGS(off) Voltage: -2.0V to -3.6V.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC5603-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.5 Units V  W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.0V to -3.