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IXYS

IXFB70N100X Datasheet Preview

IXFB70N100X Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFB70N100X
D
G
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
1000
V
1000
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
70
150
25
2.5
1785
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force
30..120 / 6.7..27
N/lb
10
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.0 V
200 nA
50 A
7.5 mA
89 m
VDSS =
ID25 =
RDS(on)
1000V
70A
89m
PLUS264TM
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100944B(11/19)




IXYS

IXFB70N100X Datasheet Preview

IXFB70N100X Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 35A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A
RG = 1(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 35A
Characteristic Values
Min. Typ. Max
34
57
S
0.30
9160
pF
2650
pF
72
pF
390
pF
1500
pF
48
ns
20
ns
127
ns
9
ns
350
nC
84
nC
190
nC
0.07C/W
0.13C/W
IXFB70N100X
PLUS264TM (IXFB) Outline
A
E
Q
R
Q1
D
R1
12 3
L1
L
b1
b2
e
4
b
c
A1
Back Side
1 - Gate
2,4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 35A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
70 A
280 A
1.4 V
310
ns
3.5
μC
22.6
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXFB70N100X
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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