IXFB90N85X - Power MOSFET

Features

Low QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXFB90N85X
Manufacturer	IXYS
File Size	166.62 KB
Description	Power MOSFET
Datasheet	IXFB90N85X Datasheet
Additional preview pages of the IXFB90N85X datasheet.

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Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB90N85X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 90 180 45 4 1785 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120 / 6.7..

Published: Aug 15, 2016 |