Overview: X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB90N85X
D G
S Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
FC
Weight Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C 90 180
45 4
1785
50
-55 ... +150 150
-55 ... +150 A A
A J
W
V/ns
C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120 / 6.7..27 N/lb 10 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.
