IXFB70N100X - Power MOSFET

Features

Low QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXFB70N100X
Manufacturer	IXYS
File Size	166.32 KB
Description	Power MOSFET
Datasheet	IXFB70N100X Datasheet
Additional preview pages of the IXFB70N100X datasheet.

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Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFB70N100X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 70 150 25 2.5 1785 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120 / 6.7..

Published: Sep 3, 2020 |