* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC74N20P Datasheet (120.14 KB)
IXFC74N20P
IXYS
120.14 KB
Power mosfet.
PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) V= DSS ID25 = = RDS(on) trr ≤ 200 V 35 A 36 mΩ 200.
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