IXFC74N20P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gat
- Part: IXFC74N20P
- Manufacturer: IXYS (official site)
- Size: 120.14 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
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IXFC74N20P Description
PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) V= DSS ID25 = = RDS(on) trr ≤ 200 V 35 A 36 mΩ 200 ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS.