IXFC110N10P - PolarHT HiPerFET Power MOSFET

Product Overview

IXYS

Part number	IXFC110N10P
Manufacturer	IXYS
File Size	114.81 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFC110N10P Datasheet
Additional preview pages of the IXFC110N10P datasheet.

z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D S TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in. ) from.

📁 Similar Datasheet

IXFC12N80P - PolarHV HiPerFET Power MOSFET ISOPLUS220 (IXYS Corporation)
IXFC13N50 - HiPerFET MOSFET ISOPLUS220 (IXYS Corporation)
IXFC14N60P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFC14N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFC15N80Q - N-Channel MOSFET (IXYS Corporation)
IXFC16N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFC20N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFC24N50 - (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 (IXYS Corporation)

Other Datasheets by IXYS

Published: Jun 16, 2010 |