IXFC110N10P - PolarHT HiPerFET Power MOSFET

IXYS (now Littelfuse)

Datasheet Details

Part number	IXFC110N10P
Manufacturer	IXYS (now Littelfuse)
File Size	114.81 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFC110N10P Datasheet

Overview

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4U.com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 ...

+175 175 -55 ...

Key Features

z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D S TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in. ) from.

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