• Part: IXFH70N30Q3
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 851.17 KB
Download IXFH70N30Q3 Datasheet PDF
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Datasheet Summary

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT70N30Q3 IXFH70N30Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings  20  30 V/ns -55 ... +150 150 -55 ... +150  C  C  C °C °C 1.13...