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IXFK120N25P - Power MOSFET

Features

  • z z 1.13/10 Nm/lb. in. 10 6 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±200 25 250 19 24 V V nA μA μA mΩ Advantages z z z Easy to mount Space savings High power.

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS(on) = trr < www.DataSheet4U.com 250 V 120 A 24 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 120 75 300 60 60 2.5 10 700 -55 ... +175 175 -55 ... +150 V V V V TO-264(SP) (IXFK) G A A A A mJ J V/ns W °C °C °C °C D (TAB) S PLUS247 (IXFX) G = Gate S = Source (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.
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