Datasheet4U Logo Datasheet4U.com

IXFK120N30T - GigaMOS Power MOSFET

Key Features

  • z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK120N20P Power MOSFET IXYS Corporation
IXFK100N10 Power MOSFET IXYS Corporation
IXFK100N25 Power MOSFET IXYS Corporation
IXFK102N30P Polar MOSFETs IXYS Corporation
IXFK105N07 HiPerFET Power MOSFETs IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK120N30T GigaMOS Power MOSFET
IXFK120N20 Power MOSFET
IXFK120N25 HiPerFET Power MOSFETs
IXFK120N25P Power MOSFET
IXFK120N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N30T IXFX120N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 120A 24mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 120 330 30 2.5 20 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source (TAB) D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) 1.6mm (0.062 in.