IXFK120N30T - GigaMOS Power MOSFET

This page provides the datasheet information for the IXFK120N30T, a member of the IXFX120N30T GigaMOS Power MOSFET family.

Product Overview

IXYS

Part number	IXFK120N30T
Manufacturer	IXYS
File Size	163.07 KB
Description	GigaMOS Power MOSFET
Datasheet	IXFK120N30T Datasheet
Additional preview pages of the IXFK120N30T datasheet.

z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density.

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Published: Jul 5, 2010 |