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IXFK140N20P - PolarHT HiPerFET Power MOSFET

Key Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 Nm/lb. in. 10 g z International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±200 25 250 18 14 V V nA μA μA mΩ mΩ.

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Full PDF Text Transcription for IXFK140N20P (Reference)

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Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 140N20P VDSS = 200 V ID25 = 140 A RD...

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e Rated Fast Intrinsic Diode IXFK 140N20P VDSS = 200 V ID25 = 140 A RDS(on) = 18 mΩ ≤ 150 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ±20 ±30 140 75 280 60 100 4 10 800 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-264(SP) (IXFK) G D (TAB) S G