* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 10 g z International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS
IXFK140N20P Datasheet (125.99 KB)
IXFK140N20P
IXYS
125.99 KB
Polarht hiperfet power mosfet.
Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 140N20P VDSS .
📁 Related Datasheet
IXFK140N25T GigaMOS Power MOSFET (IXYS)
IXFK140N25T GigaMOS Power MOSFET (IXYS)
IXFK140N30P Power MOSFET (IXYS)
IXFK100N10 Power MOSFET (IXYS Corporation)
IXFK100N25 Power MOSFET (IXYS Corporation)
IXFK100N65X2 Power MOSFET (IXYS)
IXFK102N30P Polar MOSFETs (IXYS Corporation)
IXFK105N07 HiPerFET Power MOSFETs (IXYS Corporation)
IXFK110N06 HiPerFET Power MOSFETs (IXYS Corporation)
IXFK110N07 HiPerFET Power MOSFETs (IXYS Corporation)
