Download the IXFK140N25T datasheet PDF.
This datasheet also covers the IXFX140N25T variant, as both devices belong to the same gigamos power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
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Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 ± 200 V V nA
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Easy to Mount Space Savings High Power Density.
Full PDF Text Transcription for IXFK140N25T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFK140N25T. For precise diagrams, and layout, please refer to the original PDF.
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25T IXFX140N25T RDS(on) ≤...
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Avalanche Rated Fast Intrinsic Diode IXFK140N25T IXFX140N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 140A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C Maximum Ratings 250 250 ± 20 ± 30 140 380 40 3 960 20 -55 ... +150 150 -55 ... +150 V V V V A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source (TAB) D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) 1.6m
IXFK140N25T Datasheet
