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IXFN80N50Q2 - HiPerFET Power MOSFET

Features

  • Double metal process for low gate resistance.
  • miniBLOC, with Aluminium nitride isolation.
  • Unclamped Inductive Switching (UIS) rated.
  • Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g.
  • Fast intrinsic Rectifier.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A RDS(on)= 60 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings G S 500 500 ± 30 ± 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ...
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