• Part: IXFN82N60Q3
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 637.19 KB
Download IXFN82N60Q3 Datasheet PDF
IXFN82N60Q3 page 2
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Datasheet Summary

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 30 40 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 V/ns C C C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test...