Overview: Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg VISOL
Md
Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 600 V 600 V 30 V 40 V 66 A 240 A 82 A 4 J 50
960
-55 ... +150 150
-55 ... +150
2500 3000 1.5/13 1.3/11.5
30 V/ns
W
C C C
V~ V~ Nm/lb.in. Nm/lb.in.
g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 41A, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.5 6.5 V 200 nA 50 A 3 mA 75 m VDSS = ID25 = RDS(on) trr 600V 66A 75m 300ns miniBLOC E153432
S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
